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| Semiconductor RFM7N35, RFM7N40, RFP7N35, RFP7N40 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17424. July 1998 Features * 7A, 350V and 400V * rDS(ON) = 0.75 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Symbol D Ordering Information PART NUMBER RFM7N35 RFM7N40 RFP7N35 RFP7N40 PACKAGE TO-204AA TO-204AA TO-220AB TO-220AB BRAND RFM7N35 RFM7N40 RFP7N35 RFP7N40 S G NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) DRAIN (TAB) JEDEC TO-220AB SOURCE DRAIN GATE SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1536.2 5-1 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFM7N35 350 350 7 15 20 100 0.8 -55 to 150 300 260 RFM7N40 400 400 7 15 20 100 0.8 -55 to 150 300 260 RFP7N35 350 350 7 15 20 75 0.6 -55 to 150 300 260 RFP7N40 400 400 7 15 20 75 0.6 -55 to 150 300 260 UNITS V V A A V W W/oC oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD Linear Derating Factor (Above 25oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 350 400 VGS(TH) IDSS VGS = VDS , ID = 250A (Figure 8) VDS = Rated BVDSS , TC = 25oC VDS = 0.8 x Rated BVDSS , TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) RFM7N35, RFM7N40 RFP7N35, RFP7N40 16 54 170 62 4 1 25 100 0.75 5.25 45 75 250 100 1600 300 200 1.25 1.67 V V V A A nA V ns ns ns ns pF pF pF oC/W oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFM7N35, RFP7N35 RFM7N40, RFP7N40 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Drain to Source On Voltage (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS rDS(ON) VDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 7A, VGS = 10V (Figures 6, 7) ID = 7A, VGS = 10V VDS = 200V, ID 3.5A, RG = 50, RL = 56, VGS = 10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTES: 2. Pulse Test: Pulse Width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. SYMBOL VSD trr TEST CONDITIONS ISD = 7A ISD = 7A, dISD/dt = 100A/s MIN TYP 870 MAX 1.4 UNITS V ns 5-2 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) Unless Otherwise Specified 8 7 6 RFM7N40 5 RFP7N40 4 3 2 1 0 25 0.8 0.6 0.4 0.2 0 0 50 100 150 50 75 100 125 150 TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 100 TC = 25oC TJ = MAX RATED ID , DRAIN CURRENT (A) ID (MAX) CONTINUOUS DC OP ER 16 PULSE DURATION = 80s TC = 25oC 12 VGS = 7V TO 20V 8 VGS = 5V 4 VGS = 4V 0 1000 0 4 8 12 16 20 VGS = 6V ID , DRAIN CURRENT (A) 10 1 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) AT I ON RFM7N35, 40 RFP7N35, 40 0 RFM7N35, RFP7N35 RFM7N40, RFP7N40 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) 16 VDS = 10V PULSE DURATION = 250s rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () 1.8 TC = 125oC 1.4 VGS = 10V PULSE DURATION = 250s 12 TC = 25oC 8 TC = 125oC 4 TC = -40oC 1 TC = 25oC TC = -40oC 0.6 0 0 2 4 6 VGS , GATE TO SOURCE (V) 8 10 0.2 0 4 8 12 ID , DRAIN CURRENT (A) 16 20 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 5-3 RFM7N35, RFM7N40, RFP7N35, RFP7N40 Typical Performance Curves NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2 VGS = 10V ID = 7A NORMALIZED GATE THRESHOLD VOLTAGE Unless Otherwise Specified (Continued) 1.4 ID = 250A 1.2 1.5 1 1 0.8 0.5 0.6 -50 0 50 100 150 TJ , JUNCTION TEMPERATURE (oC) 200 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (oC) 200 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1600 1400 C, CAPACITANCE (pF) 1200 1000 800 600 400 200 CRSS 0 0 10 20 30 VDS , DRAIN TO SOURCE (V) 40 50 COSS CISS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 400 BVDSS 300 VDD = VDSS GATE TO SOURCE VOLTAGE 10 RL = 57 IG(REF) = 0.45mA VGS = 10V VDD = VDSS 8 VDS , (V) 6 200 0.75 VDSS 0.50 VDSS 100 0.25 VDSS DRAIN TO SOURCE VOLTAGE 0 20 IG(REF) IG(ACT) t, TIME (s) 80 IG(REF) IG(ACT) 0 2 4 VGS , (V) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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